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[en] The problem of measuring very steep doping profiles, of the type usually present in ion-implanted GaAs FETs, is critically examined in the light of numerical solutions of the Poisson equation for some typical layers. It is found that the most popular techniques (C/V and saturation-current measurements) may be quite misleading or, at least, appreciable corrections are typically required. (author)
Journal
IEE Proceedings. Part 1, Solid-State and Electron Devices; ISSN 0143-7100; 
; v. 128(3, pt.1); p. 97-100
; v. 128(3, pt.1); p. 97-100