[en] For the annealing experiment <111>-oriented Se samples were implanted with Sb ions. To produce heavily damaged layers of different thickness one part of the samples was additionally implanted with Ar ions and the other part with N ions which gives amorphous layers of 1000 A and 2000 A, resp. The laser annealing was performed by means of a Q-switched Nd laser. The depth profiles of Sb atoms and the damaged layers were measured by aid of the Rutherford backscattering technique of 1.4 MeV He ions. The results show that a correlation exists between the profile broadening after and the thickness of the damaged layer before the laser annealing