Filters
Results 1 - 1 of 1
Results 1 - 1 of 1.
Search took: 0.012 seconds
[en] A pulsed thermal annealing system is described which rapidly heats samples to 7000C and can successfully activate and regrow arsenic-implanted damaged layers. The junctions so formed are shown to be of low resistivity and exhibit very good diode characteristics. Residual damage seen after the anneal does not appear to degrade the junction performance. (author)
Journal
Electronics Letters; ISSN 0013-5194; 
; v. 17(12); p. 403-405
; v. 17(12); p. 403-405