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AbstractAbstract
[en] Various procedures were investigated for fabricating to p-type PbTe metal contacts which have a low resistance that remains low with age. Polishing and etching procedures for achieving satisfactory simple platinum-plated contacts are described. Significant improvement, yielding lower resistance and longer life contacts, was effected by a procedure involving implantation of silver at three ion energies followed by a single pulse anneal with ruby laser radiation. Also described is a copper-gallium alloy which allowed convenient and easy bonding, at temperatures just above room temperature, of PbTe diode lasers to heat sinks. (author)
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Record Type
Journal Article
Journal
Solid-State Electronics; ISSN 0038-1101;
; v. 24(7); p. 675-680

Country of publication
ALLOYS, AMPLIFIERS, ATOMIC IONS, CHALCOGENIDES, CHARGED PARTICLES, DEPOSITION, ELECTRICAL EQUIPMENT, ELECTRICAL PROPERTIES, ELEMENTS, FABRICATION, GALLIUM ALLOYS, HEAT TREATMENTS, HEATING, IONS, JOINING, LASERS, LEAD COMPOUNDS, METALS, PHYSICAL PROPERTIES, PLASMA HEATING, PLATINUM METALS, SEMICONDUCTOR DEVICES, SEMICONDUCTOR JUNCTIONS, SEMICONDUCTOR MATERIALS, SOLID STATE LASERS, SURFACE COATING, SURFACE FINISHING, TELLURIDES, TELLURIUM COMPOUNDS, TRANSITION ELEMENT ALLOYS, TRANSITION ELEMENTS
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