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[en] The influence of lattice mismatch and thermal stresses on the defect generation in GaAs-GaInP heterostructures was studied. The results of electron-probe, X-ray topographic and electron-microscopic investigations are presented. The comparison of X-ray diffraction and microcathodoluminescence results is done. (author)
Journal
Cryst. Res. Technol; ISSN 0023-4753; 
; v. 16(2); p. 169-174
; v. 16(2); p. 169-174