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[en] In this review, the important parameters that affect the electrical characteristics of ion implanted layers in compound semiconductors are discussed. Applications of this technology to the fabrication of micowave and electrooptical devices are discussed and a state-of-the-art summary of implantation results in the III-V, II-VI and IV-VI semiconductors presented. (orig.)
Journal
Nuclear Instruments and Methods; ISSN 0029-554X; 
; v. 182/183(pt.2); p. 553-571
; v. 182/183(pt.2); p. 553-571