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[en] Ion implanted semiconductors were investigated after laser and electron beam annealing. Partially damaged crystal and amorphous layers exhibit a different behaviour after irradiation. Free-of-defects layers can be obtained by using cw-scanning or a single-pulse beam. Redistribution and incorporation of impurities depends on the annealing conditions. (orig.)
Journal
Nuclear Instruments and Methods; ISSN 0029-554X; 
; v. 182/183(pt.2); p. 573-579
; v. 182/183(pt.2); p. 573-579