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[en] Change of reflectivity in the UV to IR range has been measured on crystalline silicon implanted at very high dose rate by a glow discharge process of BF3 or PF5 accelerated to 10-50 kV. Partial regrowth of the damage by beam annealing is observed but an amorphous film always remains on the top surface. (orig.)
Journal
Nuclear Instruments and Methods; ISSN 0029-554X; 
; v. 182/183(pt.2); p. 595-600
; v. 182/183(pt.2); p. 595-600