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Gornov, M.G.; Gurov, Yu.B.; Morokhovets, M.A.; Nejmark, K.N.; Osipenko, B.P.; Sandukovskij, V.G.
Joint Inst. for Nuclear Research, Dubna (USSR). Lab. of Nuclear Problems1982
Joint Inst. for Nuclear Research, Dubna (USSR). Lab. of Nuclear Problems1982
AbstractAbstract
[en] A possibility to fabricate surface-barrier detectors of silicon doped by phosphorus in the thermal neutron flux is investigated. The monocrystals of p-type are used as a starting material. Radiation has been performed in the reactor thermal column with a small admixture of fast neutrons. Annealing of the radiation defects has been made in atmosphere. Stable value of resistivity have been achieved at 600-800 deg C in 1-2 h. It is shown that the detectors made of this material can be used for α-particle, electron and heavy ion spectrometry, the parameters of semiconductor detectors corresponding to the best commercial detectors
Original Title
Poverkhnostno-bar'ernye detektory iz kremniya, legirovannogo fosforom v potoke teplovykh nejtronov
Source
1982; 6 p; 12 refs.; 2 figs.; submitted to the journal Instrum. Exp. Techn.
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