[en] The measuring methods of total thicknesses and sensitive regions of silicon detectors by means of the proton beam and radioactive sources of electrons are accounted. To define these values the dependences of different parameters of the registered spectra on thickness of calibrated silicon filters been used. It simplifies the measurement and eliminates the disadvantages of the known methods. It is apparent that these methods permit to define tthe geometrical parameters of structure layers of silicon detectors with the accuracy of better than 10 μm which depends only on the stability of the spectrometrical channel