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AbstractAbstract
[en] A method to prepare cross-sectional (X) semiconductor specimens for transmission electron microscopy (TEM) has been described. The power and utility of XTEM has been demonstrated. It has been shown that accuracy and interpretation of indirect structural-defects profiling techniques, namely, MeV He+ channeling and secondary ion mass spectrometry (SIMS) can be greatly enhanced by comparing their results with those obtained by XTEM from the same set of samples
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Oct 1982; 14 p; 18. ceramic science conference on advances in materials characterization; Alfred, NY (USA); 16 - 18 Aug 1982; CONF-820891--3; Available from NTIS, PC A02/MF A01 as DE83003662
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Report
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Conference
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