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Sagara, Akio; Akaishi, Kenya; Miyahara, Akira.
Proceedings of the 3rd meeting on ultra high vacuum techniques for accelerators and storage rings, Tsukuba, January 24-25, 19801981
Proceedings of the 3rd meeting on ultra high vacuum techniques for accelerators and storage rings, Tsukuba, January 24-25, 19801981
AbstractAbstract
[en] The observation of Ti getter surfaces was made by ISS (low energy inert gas ion scattering spectroscopic) method. The adsorption process of CO on a Ti film was observed by He ions. The adsorption of CO attained equilibrium at about 2 x 10-5 Torr-sec. The burying process of adsorbed CO into a Ti film, the desorption of CO from Ti or Mo surface by He or Ar ion impact, the release of H2 gas from a Ti film by Ar ion impact, the sputter etching process of a Ti film on a Mo substrate by Ar ion bombardment, and the sputter etching process of a Au film on a Mo substrate by Ar ion bombardment were observed. It was found that the control of low-Z impurities in tokamak was made by burying them in Ti getter films. The recycling of hydrogen was suppressed by Ti films. (Kato, T.)
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Horikoshi, Gen-ichi (ed.); National Lab. for High Energy Physics, Oho, Ibaraki (Japan); 122 p; Apr 1981; p. 40-48; 3. meeting on ultra high vacuum techniques for accelerators and storage rings; Oho, Ibaraki (Japan); 24 - 25 Jan 1980
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