[en] A correlation between the amount of disorder measured by channeling and the trajectory of measured ellipsometric angles (PSIδ) is reported. The implantation was performed by ₁₁B⁺, ₂₈Si⁺, ₃₁P⁺, ₄₀Ar⁺, ₇₂Ge⁺, ₇₅As⁺, ₂₀₉Bi⁺ ions at room temperature. For fully amorphous samples the thickness data were obtained from channeling and the complex refractive index originated from a 145 nm thick amorphous layer. These experimental values were used to compute a theoretical curve in the PSI-δ plane. The good agreement between the theoretical curve and experimental data provides a non-destructive, rapid and non-contact method to estimate the thickness of the amorphous layer. For buried and partially disordered layers a qualitative interpretation of different trajectories depending on the ion species and other implantation conditions such as energy and dose in the PSI-δ plane can be given on the basis of channeling measurements in certain cases. It is also pointed out that plasma stripping plays an important role in preparing implanted samples for ellipsometry by removing the polymerized hydrocarbon film without affecting the disordered layer. (author)