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AbstractAbstract
[en] Mercuric iodide is a wide bandgap semiconductor, with Eg approx. = 2.14 eV at room temperature. Therefore, HgI2 is totally different from the well-studied, narrower gap, elemental semiconductors such as Si and Ge, and also different in its physical and chemical properties from the known semiconductor binary zinc-blend compounds such as GaAs or InP. The purpose of studies in the last decade was to further our understanding of HgI2; recent progress is reported
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Source
1982; 6 p; 5. international workshop on HgI/sub 2/ nuclear radiation detectors; Jerusalem (Israel); 6 - 8 Jun 1982; Available from NTIS, PC A02/MF A01 as DE83006571
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Report
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Conference
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