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Smedskjaer, L.C.; Fluss, M.J.; Legnini, D.G.; Chason, M.K.; Siegel, R.W.
Argonne National Lab., IL (USA)1982
Argonne National Lab., IL (USA)1982
AbstractAbstract
[en] Vacancy formation in Ni and in dilute Ni(Ge) alloys was studied under thermal equilibrium conditions using positron-annihilation Doppler broadening. A monovacancy formation enthalpy of 1.8 +- 0.1 eV was determined for pure Ni; combining this result with that from previous tracer self-diffusion measurements, a monovacancy migration enthalpy of 1.1 +- 0.1 eV was also deduced. Analysis of the vacancy formation measurements in Ni(0.3 at.% Ge) and Ni(1 at.% Ge) yielded a value for the vacancy-Ge binding enthalpy of 0.20 +- 0.04 eV
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Mar 1982; 4 p; 6. international conference on positron annihilation; Arlington, TX (USA); 3-7 Apr 1982; Available from NTIS, PC A02/MF A01; 1 as DE83007969
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