[en] The generation and collection of charge carriers created during the passage of energetic protons through a silicon photodiode array are modeled. Pulse height distributions of noise charge collected during exposure of a digicon type diode array to 21 and 75 MeV protons were obtained. The magnitude of charge collected by a diode from each proton event is determined not only by diffusion, but by statistical considerations involving the ionization process itself. Utilizing analytical solutions to the diffusion equation for transport of minority carriers, together with the Vavilov theory of energy loss fluctuations in thin absorbers, simulations of the pulse height spectra which follow the experimental distributions fairly well are presented and an estimate for the minority carrier diffusion length L sub d is provided