[en] This report, the first in a series of annual reports, describes the status of the research and development activities in the Electronics Division at Los Alamos National Laboratory. Much of the work described is sponsored by the Laboratory; however, other topics are included for completeness. Topics covered in this report are the use of photoconductive semiconductors as fast gates, switches, and detectors; high-temperature, radiation-hardened electronics; growth and characterization of III-V compound semiconductor material for far-infrared detector applications; the use of saturable ferromagnetic elements for high-power, high-repetition-rate switches; the development of a high-power, high-repetition-rate opening switch for use with inductive storage; the implementation of a facility for testing high-power components, initially capacitors, in a high-repetition-rate environment; fast gating and characterization of image intensifier tubes; and the application of ion beam analysis and ellipsometry to the problem of the oxygen reduction reaction at fuel cell electrodes