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[en] Implantation profiles of B (and P) in SiO2 are calculated and experimentally analyzed by AES, SIMS and ESCA. The electron beam induced distortion of implantation profile shapes in insulators is stressed. Concerned evaluation problems are pointed out. (author)
Journal
Wissenschaftliche Zeitschrift der Wilhelm-Pieck-Universitaet Rostock. Naturwissenschaftliche Reihe; ISSN 0323-4681; 
; v. 32(2); p. 12-20
; v. 32(2); p. 12-20