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AbstractAbstract
[en] Current-voltage curves of long samples of monocrystalline p-InSb and n-InSb were determined at 77K. No decrease of conductivity with increasing voltage could be found. There are not indications for a deviation of the mean temperature of holes from the lattice temperature. Further the reproducibility of previously found negative differential resistance was investigated between 90K and 130K. The negative resistance phenomena were only weak and different from the previous measurements. Problems of contacting in semiconducter measurements and methods of producing less injecting contacts are discussed. (G.Q.)
Original Title
Leitfaehigkeit von p-Typ und n-Typ InSb
Primary Subject
Source
1972; 36 p; Available from Technical University Vienna, Karlsplatz 13, A-1040 Wien; Ref. no. 173625 II.; Diplomarbeit (Dipl. Ing.).
Record Type
Miscellaneous
Literature Type
Thesis/Dissertation
Country of publication
Reference NumberReference Number
INIS VolumeINIS Volume
INIS IssueINIS Issue