[en] Tunneling diodes on Nb₃Sn were prepared by magnetron sputtering. The superconducting transition temperatures of the Nb₃Sn films were in the range of 5 to 18 K. An energetically low-lying structure in the tunneling density of states has been localized by detailed studies of the second derivative of the current-voltage characteristics of the diodes. This structure was found near 5.5 meV for stoichiometric Nb₃Sn (Tsub(c) approx.= 18 K) and at 6.7 meV for understoichiometric Nb₃Sn (Tsub(c) approx.= 5 K). The minimum in the conductance at zero energy found in the normal state could be identified to be mainly due to inelastic phonon processes of barrier phonons and Nb₃Sn phonons. Deformations were found in the tunneling density of states of stoichiometric Nb₃Sn diodes which lead to contradiction when explained by proximity effects. (orig./GSCH)