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Wiczer, J.J.; Barnes, C.E.; Fischer, T.A.; Dawson, L.R.; Zipperian, T.E.
Sandia National Labs., Albuquerque, NM (USA)1984
Sandia National Labs., Albuquerque, NM (USA)1984
AbstractAbstract
[en] We report on AlGaAs/GaAs double heterojunction photodiodes designed and fabricated to be resistant to the effects of ionizing-radiation. The work described here includes new results comparing optimized, AlGaAs/GaAs photodiodes grown with two different growth processes: liquid phase epitaxy and molecular beam epitaxy. These devices were processed with similar photolithographic masks and exposed to high energy neutrons, electrons, and photons. Electrical and optical characterizations were completed before and after each irradiation; degradation trends are reported. 10 references
Source
1984; 22 p; SPIE annual technical symposium; San Diego, CA (USA); 19-24 Aug 1984; CONF-840872--22; Available from NTIS, PC A02/MF A01 as DE84016621
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Report
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Conference
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ALUMINIUM COMPOUNDS, ARSENIC COMPOUNDS, ARSENIDES, BARYONS, BEAMS, CURRENTS, EFFICIENCY, ELECTRIC CURRENTS, ELECTROMAGNETIC RADIATION, ELEMENTARY PARTICLES, FERMIONS, FLUIDS, GALLIUM COMPOUNDS, HADRONS, HARDENING, IONIZING RADIATIONS, NUCLEONS, PHYSICAL RADIATION EFFECTS, RADIATION EFFECTS, RADIATIONS, SEMICONDUCTOR DEVICES, SEMICONDUCTOR DIODES, SEMICONDUCTOR JUNCTIONS
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