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Mikawa, R.E.; Lenahan, P.M.
Sandia National Labs., Albuquerque, NM (USA)1984
Sandia National Labs., Albuquerque, NM (USA)1984
AbstractAbstract
[en] We use electron spin resonance to compare the effects of electron injection and gamma radiation on MOS devices. Electron injection is similar to ionizing radiation in that in both cases P/sub b/ centers are generated at the Si/SiO2 interface. However, the effects are not identical; although ionizing radiation creates E' centers in the SiO2, we are unable to observe any E' generation in oxides subjected to electron injection
Source
1984; 10 p; 21. IEEE annual conference on nuclear and space radiation effects; Colorado Springs, CO (USA); 22-25 Jul 1984; CONF-840712--12; Available from NTIS, PC A02/MF A01 as DE84016766
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