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Krishnamurthy, S.; Moriarty, J.A.
Cincinnati Univ., OH (USA). Dept. of Physics; Lawrence Livermore National Lab., CA (USA)1984
Cincinnati Univ., OH (USA). Dept. of Physics; Lawrence Livermore National Lab., CA (USA)1984
AbstractAbstract
[en] Utilizing a new complex-band-structure technique, the electronic structure of model Si-Si/sub 1-x/Ge/sub x/ and MOS superlattices has been obtained over a wide range of layer thickness d (11 less than or equal to d less than or equal to 110 A). For d greater than or equal to 44 A, it is found that these systems exhibit a direct fundamental band gap. Further calculations of band-edge effective masses and impurity scattering rates suggest the possibility of a band-structure-driven enhancement in electron mobility over bulk silicon
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1984; 23 p; International conference on superlattices, microstructures and microdevices; Champaign-Urbana, IL (USA); 13-16 Aug 1984; CONF-840877--3; Available from NTIS, PC A02/MF A01 as DE85000471
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