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Moser, P.; Pautrat, J.L.; Corbel, C.; Hautojarvi, P.
CEA Centre d'Etudes Nucleaires de Grenoble, 38 (France)1985
CEA Centre d'Etudes Nucleaires de Grenoble, 38 (France)1985
AbstractAbstract
[en] Vacancy processes are studied in several heavily irradiated semiconductors. Specimens are ZnTe, CdTe, CdTe (In), InP, InP (Cr), InP (Zn) and Ge. Irradiations are made at 20 K using a 3 MeV Van de Graaff electron accelerator. Doses are 4 x 1018 e-/cm2. Lifetime measurements are made at 77 K at each step of an isochronal annealing (30 min 20 K). In each specimen, the results show a significant increase of the lifetime (+ 30 at + 50 ps) which anneals out in different steps restoring the initial lifetime. The steps are sharp (ΔT/T=0.3) with the exception of InP, InP(Cr), InP(Zn), (ΔT/T=0.9). Tentative interpretations are given
Primary Subject
Source
Jan 1985; 4 p; 7. International conference on positron annihilation; New Delhi (India); 6-11 Jan 1985
Record Type
Report
Literature Type
Conference; Numerical Data
Report Number
Country of publication
ANTILEPTONS, ANTIMATTER, ANTIPARTICLES, BEAMS, CADMIUM COMPOUNDS, CHALCOGENIDES, CRYSTAL DEFECTS, CRYSTAL STRUCTURE, DATA, ELEMENTARY PARTICLES, ELEMENTS, FERMIONS, HEAT TREATMENTS, INDIUM COMPOUNDS, INFORMATION, LEPTON BEAMS, LEPTONS, MATERIALS, MATTER, METALS, NUMERICAL DATA, PARTICLE BEAMS, PHOSPHIDES, PHOSPHORUS COMPOUNDS, POINT DEFECTS, RADIATION EFFECTS, TELLURIDES, TELLURIUM COMPOUNDS, ZINC COMPOUNDS
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