[en] The intrinsic data of the X-ray photoelectron spectra(XPS) including valence-band region and X-ray-induced Auger electron spectra(XAES) are presented for graphite, Si, SiC, Si₃N₄ and SiO₂. Soft ion-etching subsequently performed after heating at 350 ⁰C under high vacuum was employed for removing adsorbates on the sample surface. Chemically clean surfaces were easily obtained by etching with 8 keV Ar⁺-ion beam of ca. 4 μA/cm², and chemical shifts of Si2p line were determined to be 0.9 eV for the carbide, 2.1 eV for the nitride and 4.0 eV for the oxide. Using the data obtained in the present work, chemical states of the surfaces exposed to H₂⁺ ions were studied. The observations suggest formations of C-H bonds on graphite and SiC surfaces, and Si-H bonds on Si, Si₃N₄ and SiO₂ surfaces, respectively. (author)