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Rehak, P.; Walton, J.; Gatti, E.
Brookhaven National Lab., Upton, NY (USA); Lawrence Berkeley Lab., CA (USA); Politecnico di Milano (Italy). Dipt. di Elettronica; Technische Univ. Muenchen, Garching (Germany, F.R.). Fakultaet fuer Physik; Max-Planck-Institut fuer Physik und Astrophysik, Muenchen (Germany, F.R.)1985
Brookhaven National Lab., Upton, NY (USA); Lawrence Berkeley Lab., CA (USA); Politecnico di Milano (Italy). Dipt. di Elettronica; Technische Univ. Muenchen, Garching (Germany, F.R.). Fakultaet fuer Physik; Max-Planck-Institut fuer Physik und Astrophysik, Muenchen (Germany, F.R.)1985
AbstractAbstract
[en] Progress in testing semiconductor drift detectors is reported. Generally better position and energy resolutions were obtained than resolutions published previously. The improvement is mostly due to new electronics better matched to different detectors. It is shown that semiconductor drift detectors are becoming versatile and reliable detectors for position and energy measurements
Source
1985; 10 p; IEEE nuclear science symposium; San Francisco, CA (USA); 23-25 Oct 1985; CONF-851009--60; Available from NTIS, PC A02/MF A01; 1 as DE86006246; Portions of this document are illegible in microfiche products.
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