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Dubus, M.; Margail, J.; Martin, P.
CEA Centre d'Etudes Nucleaires de Grenoble, 38 (France). Inst. de Recherche Technologique et de Developpement Industriel (IRDI)1985
CEA Centre d'Etudes Nucleaires de Grenoble, 38 (France). Inst. de Recherche Technologique et de Developpement Industriel (IRDI)1985
AbstractAbstract
[en] The high depth resolution 160(d,α)14N nuclear reaction is used to profile oxygen in SIMOX structures formed after high dose (from 1 x 1018 to 3 x 1018 cm -2) implantation of oxygen into silicon at an energy of 200 keV. As the thickness of the buried silicon dioxide layers is large, the 160(d,P0) peak interferes with the 160(d,α) energy spectrum. The observation of the 160(d,p1) peak allows to deduce the expected P0 peak which is then deducted from the energy spectrum. This numerical method has been successfully validated on thermally grown Si02 layers on Si and applied to SIMOX structures
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Jul 1985; 11 p; 7. International conference on ion beam analysis (IBA 85); Berlin (Germany, F.R.); 7-12 Jul 1985
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