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AbstractAbstract
[en] A kinetic model has been developed to investigate the synergistic effects of radiation-enhanced diffusion, radiation-induced segregation and preferential sputtering on the spatial redistribution of implanted solutes during implantation at elevated temperatures. Sample calculations were performed for Al+ and Si+ ions implanted into Ni. With the present model, the influence of various implantation parameters on the evolution of implant concentration profiles could be examined in detail
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Nov 1985; 8 p; Materials Research Society meeting; Boston, MA (USA); 2-7 Dec 1985; Available from NTIS, PC A02/MF A01 as DE86005537
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Report
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Conference
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