Filters
Results 1 - 1 of 1
Results 1 - 1 of 1.
Search took: 0.015 seconds
AbstractAbstract
[en] The semiconductor industry relies heavily on ion-beam techniques for both the introduction of impurities into substrates (ion implantation) and for the analysis of the layers so formed. Ion beam techniques also play an important role in the analysis of various thin film and surface reactions that can occur during device processing. This review concentrates mainly on Rutherford Backscattering Spectrometry and ion channeling which are the most frequently used techniques for characterising semiconductors
Primary Subject
Secondary Subject
Source
Australian Inst. of Nuclear Science and Engineering, Lucas Heights; 279 p; Nov 1985; p. 7-12; 4. Australian conference on nuclear techniques of analysis; Lucas Heights (Australia); 6-8 Nov 1985
Record Type
Miscellaneous
Literature Type
Conference
Report Number
Country of publication
Reference NumberReference Number
Related RecordRelated Record
INIS VolumeINIS Volume
INIS IssueINIS Issue