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[en] A large load size, low pressure, hot wall CVD tungsten process has been developed. The deposition is self-aligned to single crystal silicon or polysilicon. The use of the CVD tungsten in VLSI device fabrication is discussed. Applications include the use of CVD tungsten for a contact barrier to reduce contact resistance and protect shallow junctions from aluminum spiking. Also discussed is the application of CVD tungsten as a sheet resistance - reducing shunt material for polysilicon gate and diffusion lines
Source
Blewer, R.S; p. 13-20; ISBN 0-931837-32-4; 
; 1986; p. 13-20; Materials Research Society; Pittsburgh, PA (USA); Workshop on tungsten and other refractory metals; Albuquerque, NM (USA); 7-9 Oct 1985
; 1986; p. 13-20; Materials Research Society; Pittsburgh, PA (USA); Workshop on tungsten and other refractory metals; Albuquerque, NM (USA); 7-9 Oct 1985