[en] High-rate magnetron sputtering is a relatively simple process to produce tungsten films with good electrical and mechanical properties, and it offers good uniformity, reproducibility, process flexibility, and high throughput. The purity of the sputtered films is affected by the target purity (cold-pressed 99.95%, chemical vapor deposited 99.99% and cast 99.999%), base pressure, deposition rate, and substrate bias. Typical resistivity in films of 2000 to 3000A thickness deposited on Si, poly-Si, and SiO/sub 2/ ranges from 10 to 12 μΩ-cm, and this may be compared with 6 and 11 μΩ-cm by high-temperature evaporation and chemical vapor deposition, respectively. The presence of biaxial stress caused by substrate scanning was determined by x-ray technique. The sputtered films exhibit high compressive stress when deposited at low Ar pressure. It decreases with increasing pressure, and eventually changes sign to become tensile, and increases further with increasing pressure. Effects of processing parameters on films properties, and a comparison of film properties prepared by evaporation and chemical vapor deposition are discussed