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[en] LPCVD tungsten has been suggested as a potential replacement for aluminum as an integrated circuit metallization. The films are found to be conformal, easily patterned and compatible with CMOS device processing. However, certain difficulties still remain to be resolved before the film will be entirely suitable for IC applications. The film resistivity and contact resistance both need to be reduced and the dependence of film structure on substrate needs to be evaluated
Source
Blewer, R.S; p. 249-256; ISBN 0-931837-32-4; 
; 1986; p. 249-256; Materials Research Society; Pittsburgh, PA (USA); Workshop on tungsten and other refractory metals; Albuquerque, NM (USA); 7-9 Oct 1985
; 1986; p. 249-256; Materials Research Society; Pittsburgh, PA (USA); Workshop on tungsten and other refractory metals; Albuquerque, NM (USA); 7-9 Oct 1985