[en] Tungsten films have been deposited via the silicon reduction of WF/sub 6/ in a LPCVD system on phosphorous-doped and undoped polycrystalline silicon and on phosphorous-doped p-type and undoped p-type single-crystal silicon. Deposition temperatures range from 310⁰ to 540⁰C. Depending on the precleaning procedure, i.e., wet chemical clean and wet chemical clean followed by an argon plasma treatment, obtainable film thicknesses are 400 and 800A, respectively on undoped substrates. A strong dependence of film thickness as a function of deposition temperature is observed for the phosphorous doped substrates