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[en] The authors have studied the effects of implanted dopant and damage on the extent of the self-limiting reaction: 2WF/sub 6/ + 3Si → 2W + 3SiF/sub 4/ increases. A strong relationship is observed which depends on both damage and dopant type. Si wafers were implanted with Si, As, P and B at energies between 25 and 200 KeV and doses between 8 x 10 /sup 14/ and 10/sup 16/ atoms/cm/sup 2/. Wafers doped with 10/sup 16/ atoms/cm/sup 2/ As, in the as-implanted condition, showed the greatest reactivity with WF/sub 6/, the w film being 450A thick. The enhanced reactivity of this wafer is probably due to a unique aspect of its microscopic surface, such as roughness. A model, based on optical measurements of Si surfaces, and TEM observations of the W/Si interface is presented
Source
Blewer, R.S; p. 209; ISBN 0-931837-32-4; 
; 1986; p. 209; Materials Research Society; Pittsburgh, PA (USA); Workshop on tungsten and other refractory metals; Albuquerque, NM (USA); 7-9 Oct 1985
; 1986; p. 209; Materials Research Society; Pittsburgh, PA (USA); Workshop on tungsten and other refractory metals; Albuquerque, NM (USA); 7-9 Oct 1985