[en] Time response of the commersial NaI scintillation detector and semiconductor Ge(Li) detector is studied. Time resolution for NaI scintillators 40 and 65 mm in diameter is found to be close to 5 ns, and those for 40-50 cm³ Ge(Li) detectors - 8-10 ns. The dependence of pulse rise time of the semiconductor detectors on various factors is tested. The pulse rise time depends on the point where charge formation takes place and on the subsequent time of charge accumulation. As a rule, the rise time of the pulses which correspond to full energy absorption peaks are shorter than those of the Compton distribution. By the rise time selection technique one is able to improve considerably the energy resolution of imperfect neutron-damaged Ge detectors and their peak-to-Compton ratios