[en] The results of hydrogen evolution experiments on amorphous silicon alloys prepared by high frequency PECVD of gas mixtures containing SiH₄, NH₃, PH₂, B₂H₆ are compared. Using a very low heating rate of 5 degree/min it is possible to resolve fine structure on the exodiffusion spectra. Three evolution processes are observed: (a) low temperature effusion due to included gas (b) mid temperature effusion due to 'clustered' hydrogen bonds (c) high temperature effusion due to 'isolated' hydrogen bonds In addition it is possible to oberve very fine structure 'puffing' due to the release of molecular hydrogen at mid to high temperature. Silicon and silicon nitride films have been annealed at low temperatures before the exodiffusion experiments and changes in the evolution spectra are observed, dependent on the annealing process. A scanning electron microscope study of the effect of high temperature heat treatment has also been undertaken. These results are correlated with infra-red absorption measurements and the influence of doping concentration and substrate character discussed. Under certain preparation conditions the films blister on heating and finally burst forming circular craters, and these effects are shown to be dependent on substrate material and intrinsic stress of the as-grown films