Electron irradiation effect on photosensitivity of Ge(Hg,Sb)-structures with injection amplification

Kurmashev, Sh.D.; Chalaya, I.I.

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Electron irradiation effect on photosensitivity of Ge(Hg,Sb)-structures with injection amplification

Kurmashev, Sh.D.; Chalaya, I.I.1986

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AbstractAbstract

[en] Electron irradiation effect (E=5 MeV) on volt-ampere characteristics (VAC) and photosensitivity of injection photodiodes from p-Ge (Hg, Sb) has been investigated. It is detected that VAC of irradiated photodiodes are placed far above the VAC of initial photodiodes. Hole mobility under irradiation increased 1.2 times as much. Sensitivity of injection photodiodes increased approximately 7.5 times as much

Original Title

Vliyanie ehlektronnogo oblucheniya na fotochuvstvitel'nost' Ge(Hg,Sb)-struktur s inzhektsionnym usileniem

Primary Subject

MATERIALS SCIENCE (B2260)

Source

For English translation see the journal Soviet Physics - Semiconductors (USA).

Record Type

Journal Article

Journal

Fizika i Tekhnika Poluprovodnikov; ISSN 0015-3222;

; CODEN FTPPA; v. 20(6); p. 1134-1136

Country of publication

USSR

Descriptors (DEI)

ANTIMONY, CARRIER MOBILITY, ELECTRON BEAMS, GERMANIUM, HETEROJUNCTIONS, MERCURY, MEV RANGE 01-10, PHOTOCONDUCTIVITY, PHOTODIODES, PHYSICAL RADIATION EFFECTS

Descriptors (DEC)

BEAMS, ELECTRIC CONDUCTIVITY, ELECTRICAL PROPERTIES, ELEMENTS, ENERGY RANGE, LEPTON BEAMS, METALS, MEV RANGE, MOBILITY, PARTICLE BEAMS, PHYSICAL PROPERTIES, RADIATION EFFECTS, SEMICONDUCTOR DEVICES, SEMICONDUCTOR DIODES, SEMICONDUCTOR JUNCTIONS

LanguageLanguage

Russian

Reference NumberReference Number

18035434

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