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Miralles, A.; Herms, A.; Bertran, E.; Cornet, A.; Morante, J.R.
Proceedings of the Mediterranean electrotechnical conference. MELECON 1985. Volume IV. Solar energy1985
Proceedings of the Mediterranean electrotechnical conference. MELECON 1985. Volume IV. Solar energy1985
AbstractAbstract
[en] An experimental study of Au-polycrystalline indium doped CdS Schottky barriers has been made. The current-voltage and capacitance-voltage characteristics of CdS films of various grain sizes have been measured. Analysis of these data indicate that the grain boundary state density increase and the grain sizes decrease give rise to enhancement of the quality factor of the metal-polycrystalline semiconductor Schottky barrier and influence on the varistor behavior of these polycrystalline structures. In order to explain these modifications on the characteristics of the devices performed a theoretical model has been developed on the basis of the analysis of the trapped charge in the grain boundary. The experimental results obtained are in agreement with the proposed model
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Luque, A.; Figueiras, A.R.; Nobili, D; p. 29-32; 1985; p. 29-32; Elsevier Science Pub. Co., Inc; New York, NY (USA); MELECON '85: 3. Mediterranean electrotechnical conference; Madrid (Spain); 8-10 Oct 1985
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Book
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Conference
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BOUNDARY CONDITIONS, CADMIUM SULFIDES, CAPACITANCE, CRYSTAL DOPING, DATA PROCESSING, DOPED MATERIALS, ELECTRIC CONDUCTIVITY, ELECTRIC CURRENTS, ELECTRIC POTENTIAL, ENERGY-LEVEL DENSITY, GOLD, GRAIN SIZE, INDIUM, MATERIALS TESTING, MATHEMATICAL MODELS, POLYCRYSTALS, RESEARCH PROGRAMS, SCHOTTKY BARRIER DIODES, SOLAR CELLS
CADMIUM COMPOUNDS, CHALCOGENIDES, CRYSTAL STRUCTURE, CRYSTALS, CURRENTS, DIRECT ENERGY CONVERTERS, ELECTRICAL PROPERTIES, ELECTRONIC EQUIPMENT, ELEMENTS, EQUIPMENT, MATERIALS, METALS, MICROSTRUCTURE, PHYSICAL PROPERTIES, SEMICONDUCTOR DEVICES, SEMICONDUCTOR DIODES, SIZE, SULFIDES, SULFUR COMPOUNDS, TESTING, TRANSITION ELEMENTS
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