[en] Conductivity and Hall effect measurements in the temperature range 77 to 300 K made on CuInTe₂ single crystals grown using the programmed directional freezing and vertical Bridgman techniques are reported. All samples are found to be p-type conducting with hole concentrations in the range 10¹⁶ to 5 x 10¹⁹ cm^-3d and are also highly compensated. The p-type conductivity is dominated by a single shallow acceptor attributed to Te vacancies. Analysis of an annealed sample with a hole concentration at the bottom of the range reveals two acceptor levels with ionisation energies of 15 and 75 meV. The two acceptors are attributed to the antisite defect Cu/sub In/ and Cu vacancies, respectively. Analysis of the mobility results shows that the mobility is dominated by acoustic phonon-lattice scattering and ionised impurity scattering. A value for the deformation potential, E/sub ac/, is estimated and ionised impurity concentrations are determined. The published data on the electrical characteristics of CuInTe₂ are discussed with regard to the results reported here. (author)