[en] Transparent and conductive CdIn₂O₄ thin films are prepared by dc and rf reactive sputtering from a Cd-In alloy target. The temperature dependence of the carrier concentration and that of the Hall mobility as well as the spectral dependence of the imaginary part of dielectric permittivity indicate that CdIn₂O₄ is a n-type semiconductor in which charged point defects are responsible for the scattering of conduction electrons. Two types of scattering centres, i.e. ionized donors and oxygen traps are considered to account for the observed dependence of the Hall mobility on carrier concentration. (author)