[en] Submicron Pd features have been fabricated on Si and SiO₂ substrates by microfocused Ga⁺ ion beam exposure of spin-on palladium acetate, [Pd(O₂CCH₃)₂]₃, films. Electrical conductivity measurements were made on the exposed features as a function of ion dose for nominal linewidths of 1 and 10 μm. The sheet conductivity in the two cases is comparable and increases dramatically in the exposure dose range between 2 x 10¹⁴ and 5 x 10¹⁴ ions/cm². The conductivity of the exposed lines is further increased after heating in a hydrogen furnace. Potential applications of this process include mask repair and integrated circuit modification