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[en] MOS transistors in a Silicon On Sapphire technology with oxidation temperature variations have been exposed to ionizing pulse in order to derive activation energy of oxide charge recovery. It is found a strong dependency of annealing activation energy on oxidation/or highest temperature. After a review a model is proposed. (Auth.)
Source
Simonne, J.J.; Buxo, J. (Centre National de la Recherche Scientifique, 31 - Toulouse (France). Lab. d'Automatique et d'Analyse des Systemes) (eds.); 276 p; ISBN 0-444-87872-6; 
; 1986; p. 241-244; North-Holland; Amsterdam (Netherlands); International conference on insulating films on semiconductors, INFOS 85; Toulouse (France); 16-18 Apr 1985
; 1986; p. 241-244; North-Holland; Amsterdam (Netherlands); International conference on insulating films on semiconductors, INFOS 85; Toulouse (France); 16-18 Apr 1985