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AbstractAbstract
[en] A model of defect formation in CdTe accounting availability of TeCd antistructural defect is suggested. The given model removes discrepancies between electrophysical measurements, from the one hand, and crystallographic parameters obtained on the basis of picnometric, X-ray diffraction and mass-spectrometric measurements, on the other hand
Original Title
O dominiruyushchikh sobstvennykh tochechnykh defektakh v CdTe
Primary Subject
Source
For English translation see the journal Inorganic Materials (USA).
Record Type
Journal Article
Journal
Country of publication
Reference NumberReference Number
INIS VolumeINIS Volume
INIS IssueINIS Issue