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Keshavarz, A.A.; Fischer, T.A.; Dawes, W.R. Jr.; Hawkins, C.F.
Sandia National Labs., Albuquerque, NM (USA)1988
Sandia National Labs., Albuquerque, NM (USA)1988
AbstractAbstract
[en] The transient response of a power MOSFET device to ionizing radiation was examined using the BAMBI device simulator. The radiation rate threshold for burnout was determined for several different cases. The burnout mechanism was attributed to current-induced avalanche. The effects of the applied drain-source voltage and the base width of the parasitic bipolar device on the threshold level were modeled. It was found that the radiation rate threshold is lower at higher drain-source voltages or narrower bases. 8 refs., 17 figs
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Source
1988; 10 p; 25. annual conference on nuclear and space radiation effects; Portland, OR (USA); 12-15 Jul 1988; CONF-880730--6; Available from NTIS, PC A02; 3 as DE88012392; Paper copy only, copy does not permit microfiche production.
Record Type
Report
Literature Type
Conference; Numerical Data
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