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Li, Ming-Fu; Surh, M.P.; Louie, S.G.
Lawrence Berkeley Lab., CA (USA)1988
Lawrence Berkeley Lab., CA (USA)1988
AbstractAbstract
[en] Ab initio band structure calculations have been performed for the spin-orbit interaction effects at the top of the valence bands for GaAs and InSb. Relativistic, norm-conserving pseudopotentials are used with no correction made for the gaps from the local density approximation. The spin-orbit splitting at Γ and linear terms in the /rvec char/k dependence of the splitting are found to be in excellent agreement with existing experiments and previous theoretical results. The effective mass and the cubic splitting terms are also examined. 6 refs., 1 fig., 2 tabs
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Jun 1988; 4 p; 19. international conference on the physics of semiconductors; Warsaw (Poland); 1 Aug 1988; CONF-880884--1; Available from NTIS, PC A02/MF A01; 1 as DE88014663; Portions of this document are illegible in microfiche products.
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