[en] Total dose damage, displacement damage, and single particle events can cause microelectronic circuits to cease to function properly. The tolerance of an integrated circuit to radiation damage can be affected by a large number of factors, including the irradiation conditions, postirradiation conditions, transistor characteristics, and circuit design. Improvements in hardness can be achieved by proper fabrication techniques (including minimization of gate oxide thickness, processing temperatures, and the use of hydrogen for MOS devices) and appropriate design considerations. 23 refs., 5 figs