[en] The report outlines the measuring mechanism of SIMS and its applications in the field of semiconductor production. SIMS is the only equipment currently available for micrometer-order analysis and ppb-level impurities detection required for evaluation of semiconductors. In SIMS, sputtering of the sample surface is performed with primary ions and the secondary ions released from the sample are analyzed to identify the atomic species existing in the surface. The sputtering process and ionization process are outlined in the report, though the details of sputtering has not been fully clarified yet. In actual observation, some problems may be caused due to interfering ions and residual ions. In general, various ions including multi-valent ions, cluster ions, molecular ions, hydrogenated/oxygenated ions and hydrocarbon ions are produced in addition to monovalent ions to interfere the atoms under analysis. Interference by these ions can cause serious problems in carrying out depth profile analysis as well as observation of mass spectra. Major applications of SIMS in the field of semiconductor production include the evaluation of silicon surface, light elements, insulating materials and semiconductor devices. Some requirements to be met by further studies are also listed. (N.K.)