Filters
Results 1 - 1 of 1
Results 1 - 1 of 1.
Search took: 0.017 seconds
AbstractAbstract
[en] The 1988 progress report of the Interfaces and Thin Film Physics laboratory (Polytechnic School France) is presented. The research program is focused on the thin films and on the interfaces of the amorphous semiconductor materials: silicon and silicon germanium, silicon-carbon and silicon-nitrogen alloys. In particular, the following topics are discussed: the basic processes and the kinetics of the reactive gas deposition, the amorphous materials manufacturing, the physico-chemical characterization of thin films and interfaces and the electron transport in amorphous semiconductors. The construction and optimization of experimental devices, as well as the activities concerning instrumentation, are also described
[fr]
Le rapport d'activite, de 1988, du laboratoire de Physique des Interfaces et des Couches Minces (Ecole Polytechnique, France) est presente. Le programme de recherche porte pour l'essentiel sur les couches minces et les interfaces des materiaux semiconducteurs amorphes: le silicium et les alliages silicium-germanium, silicium-carbone et silicium-azote. En particulier les sujets suivants sont abordes: les processus elementaires et cinetiques des procedes de depot a partir de gaz reactifs, l'elaboration de materiaux amorphes, la caracterisation physico-chimique des couches minces et des interfaces et le transport electronique dans les semiconducteurs amorphes. La production et l'optimisation des dispositifs, ainsi que les activites liees a l'instrumentation, sont traitees dans le cadre du rapportOriginal Title
Physique des interfaces et des couches minces
Primary Subject
Secondary Subject
Source
1988; 18 p
Record Type
Report
Literature Type
Progress Report
Report Number
Country of publication
Reference NumberReference Number
INIS VolumeINIS Volume
INIS IssueINIS Issue