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[en] Nonalloyed Al contacts were deposited by molecular beam epitaxy on both n- and p-type In0.53Ga0.47As layers prior to air exposure. These were shown to be ohmic, with specific contact resistances in the range of mid μΩ cm2 by the transmission-line model method. The thermal stability of these contacts was tested by annealing at temperatures between 350 and 450 degree C for 30 min and at 300 degree C for 500 h. Both experiments showed stable specific contact resistances
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