[en] Conventionally batched varistors in the ZnO--Co₃O₄--Pr₆O₁₁ system that were sintered at or above 1280 degree C exhibited a sharp increase in the average breakdown voltage per grain boundary. In these samples, barrier heights and donor concentration values, derived from capacitance-voltage analysis, exhibited sharp changes at the same soaking temperature. At or above 1280 degree C, grain growth in this system proceeds with the assistance of an eutectic liquid. The improvement of the distribution of Pr₆O₁₁, by precipitation of Pr(OH)₃ during batching, resulted in varistors markedly more insensitive to firing temperature than conventionally batched ones. The presence of a liquid phase, at least during grain growth, results in an efficient distribution of grain boundary materials and dopants in general. Suitable chemisorbed gases along the grain boundaries are believed to be responsible for the formation of interface states. Segregated materials appeared to provide for enhanced transport of gaseous species along the grain boundaries. The need for the addition of oxides with large ionic-radius cations, i.e., varistor-forming oxides such as bismuth, barium, praseodymium, or lanthanum oxide, to varistor compositions is explained within this context